Speaker
Description
Since using X-ray pulsars for autonomous navigation of spacecraft was proposed, it has attracted attention from all parties because of its superior performance. As a commonly used semiconductor detector, the Silicon Drift Detector has high energy resolution, high linearity, and low noise, which are optimized for the detection of X-rays in the range of 0.5 keV to 10 keV.
The readout chip, fabricated in CMOS 130 nm, has 5 mm × 5 mm dimensions. The core of the IC is a matrix of 40×50 pixels with 80 um ×80 um pixel size. When SDD converts the incoming photons of X-ray into charge changes, the readout circuits will receive and convert these slight charges into a voltage proportional to the X-ray photon's energy. The chip uses the event-driven method to output the addresses of the pixels being hit and the corresponding energy signal of the incident X-ray photon and outputs the arrival time of the X-ray photon.
The power consumption is 31uW/pixel at a 1.5V power supply. The following simulation results use the default status of the chip after it is powered on as an example, and the readout electronics are optimized for collecting holes in this state. The charge to voltage gain of CSA is 96.13 μV/e- and the equivalent noise charge is equal to 36 e- rms (@detector self-capacitance Cdet=50fF). The pixel-to-pixel offset spread of the pixel matrix reached σ = 10.6 mV rms, and it was reduced to σ = 1.51 mV rms after correction by trim DAC.
| Minioral | Yes |
|---|---|
| IEEE Member | No |
| Are you a student? | Yes |
