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Description
The Heavy Ion Research Facility in Lanzhou (HIRFL) and the future High-Intensity Heavy-ion Accelerator Facility (HIAF) are China's leading heavy-ion research centers. Gaseous detectors are widely used in experiments at HIRFL and HIAF because they are cost-effective and have a minimal material budget for tracking. To address the readout needs of high-count-rate, high-resolution gaseous detectors with multidimensional measurements in future experimental setups, a silicon pixel sensor has been proposed. This silicon pixel sensor, designed in a 130nm CMOS process, is expected to provide micrometer-level position resolution, energy measurement with noise of tens of electrons, and timing accuracy in the nanosecond range. Serving as the critical component of the silicon pixel sensor, a 14-bit, 100 Ms/s ADC converts analog signals representing time and energy from a region of pixels into digital signals. This 14-bit 100 Ms/s Pipeline ADC employs a fully differential architecture with a redundancy-correction algorithm and a SHA-less technique. It consists of a 3.5-bit first stage, four 2.5-bit stages, and a 3-bit Flash ADC, which are controlled by two non-overlapping clocks. The MDAC circuit uses switched-capacitor comparators and cascode operational amplifiers with gain boosting. The ADC covers an area of 2600 μm × 2460 μm, consumes 140 mW at a 1.2 V supply, and achieves an effective number of bits of 13.65. This paper will present the design and performance of this ADC.
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| IEEE Member | Yes |
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