26th Australian Institute of Physics Congress and the Australian and New Zealand Conference on Optics and Photonics

Session

AIP QST: Silicon spin qubits & cryogenic engineering

QST

9 Dec 2026, 16:00

Belinda Hutchinson Building (The University of Sydney )

394. How to make donor qubit arrays and highly enriched silicon 28 with ion implantation

Prof. David Jamieson (University of Melbourne)

09/12/2026, 16:00

AIP | Quantum Science and Technology (QST)

Contributed Oral

A large-scale quantum computer employing dopants in silicon requires a low background spin bath to prolong coherent quantum states. This presentation reviews our progress optimising the materials for this goal. We show that high fluence 28-Si ion irradiation of natural silicon depletes the problematic nuclear spin I=½ 29-Si isotope from 47,000 parts per million (ppm) to ~2 ppm. At this...

461. Integrating Deterministically Implanted Donors with Control and Readout Electronics for Donor Spin Qubit Scalability

Nathalie Hilbert (University of New South Wales)

09/12/2026, 16:15

AIP | Quantum Science and Technology (QST)

Contributed Oral

Implanted high spin donors in silicon are a promising platform for quantum computing due to their long coherence times, combability with traditional semiconductor fabrication, and ability to encode cat states for quantum error correction. To date, the stochastic nature of ion implantation has limited the ability to scale such systems beyond single qudits. In the future, this platform will...

403. A quantum computing unit cell using hole spins in natural silicon

Isaac Vorreiter (University of New South Wales)

09/12/2026, 16:30

AIP | Quantum Science and Technology (QST)

Contributed Oral

Silicon spin qubits in gate-defined quantum dots build on the mature semiconductor manufacturing ecosystem, offering a scalable platform for quantum computing. Using spin-3/2 semiconductor holes instead of spin-1/2 electrons enables very fast spin control through the spin-orbit interaction while retaining the key advantages of quantum dot architectures [1-6]. However, the development of...

543. Superconducting vanadium silicide thin film and device formation in SiO2 and silicon-on-insulator

Jeffrey McCallum (The University of Melboourne)

09/12/2026, 16:45

AIP | Quantum Science and Technology (QST)

Contributed Oral

Vanadium silicide, V$_3$Si, is a superconducting, SC, silicide with a comparatively high superconducting transition temperature, T$_c$ ~ 17 K, and upper critical field, B$_{c2}$ ~ 20 T. [1, 2] It has the A15 structure and can be formed into thin superconducting films on substrates including silicon dioxide, SiO$_2$, and silicon-on-insulator, SOI, by V deposition and thin film reaction making...

327. The effects of strain and electric fields on the quadrupole tensor of an individual Sb donor in a silicon device

Evert Stolte (UNSW)

09/12/2026, 17:00

AIP | Quantum Science and Technology (QST)

Contributed Oral

The I=7/2 nuclear spin of a 123Sb donor in silicon forms an eight-level qudit which has demonstrated logical encoding of non-classical states [1]. In our nanoscale electronic devices, the nuclear quadrupole tensor provides the anharmonicity required for individual transition addressability. Further, voltage pulses on gates can modulate the quadrupole tensor, which can manifest as in-situ...

392. Magnetic Memory State Preparation for Memory Elements for Cryogenic Computing

Catherine Pot (Victoria University of Wellington)

09/12/2026, 17:15

AIP | Quantum Science and Technology (QST)

Contributed Oral

Recent developments in superconducting and quantum computing have highlighted the need for cryogenic-compatible memory technologies [1]. The lanthanide nitrides (LNs) and their solid solutions (L,L’)N are tunable magnetic semiconductors well-suited to cryogenic applications. The magnetism of (L,L’)Ns is primarily dictated by the choice of the lanthanides L and L’, while the electronic...