Description
Implanted high spin donors in silicon are a promising platform for quantum computing due to their long coherence times, combability with traditional semiconductor fabrication, and ability to encode cat states for quantum error correction. To date, the stochastic nature of ion implantation has limited the ability to scale such systems beyond single qudits. In the future, this platform will require large arrays of deterministically implanted donors to implement useful architectures and algorithms.
We have recently demonstrated the first high confidence single ion detection in enriched silicon-28 using ion beam induced charge detectors. This is a crucial first step towards the integration of deterministic ion implantation with the nanoelectronics required for control and readout of donor qudits.
In this talk, I will discuss two methods for integrating such detectors with qudit nanocircuitry and present preliminary data on each. I will present a scheme to make use of a highly optimized detector in combination with a deposited silicon dioxide layer to electrically isolate the detector electrodes from the future qudit nanocircuitry. Next, I will show preliminary charge collection efficiency measurements for a modified detector which reuses the same layout for both the detector electrodes and qudit ohmic leads. This is expected to simplify fabrication and eliminate performance degradation caused by poor-quality deposited oxides.
I will conclude the talk by presenting a scheme to align qudit nanocircuitry with donors deterministically implanted through a moveable nano-stencil. By incorporating high fluence implants at specific sites around the donor implant site and imaging them with a scanning electron microscope, we can locate the implanted donor and fabricate precisely aligned qudit nanocircuitry. By combining counted ion implants with high spatial precision, we present a clear path to the scale up of donor spins in silicon.
| I am the presenting author | Yes |
|---|