26th Australian Institute of Physics Congress and the Australian and New Zealand Conference on Optics and Photonics

Magnetic Memory State Preparation for Memory Elements for Cryogenic Computing

Not scheduled

20m

Belinda Hutchinson Building (The University of Sydney )

Contributed Oral AIP | Quantum Science and Technology (QST)

Description

Recent developments in superconducting and quantum computing have highlighted the need for cryogenic-compatible memory technologies [1]. The lanthanide nitrides (LNs) and their solid solutions (L,L’)N are tunable magnetic semiconductors well-suited to cryogenic applications. The magnetism of (L,L’)Ns is primarily dictated by the choice of the lanthanides L and L’, while the electronic properties arise from nitrogen vacancies [2].
We have developed layered (L,L’)N-based memory elements where the binary memory action corresponds to parallel (P) and anti-parallel (AP) alignment of two ferromagnetic (L,L’)N layers [3,4]. Elliptical memory islands in the P or AP state produce distinguishable fringe fields for a nearby Josephson Junction to detect as an electronic read-out of the memory element.
In this work, we identify and implement magnetic field and temperature sequences to set the state of memory islands. The results from the same sequences applied to the individual layers of the memory element are used to optimise the overall memory structure. The sequences are applied for both magnetometry of island arrays and electronic measurements read-out with nearby Josephson junctions. We show that the states can be prepared for electronic read-out, demonstrating that these structures have strong potential as memory for cryogenic electronics.

[1] S. Alam, M. S. Hossain, S. R. Srinivasa, and A. Aziz, “Cryogenic Memory Technologies,” Nature Electronics 6, no. 3 (2023)
[2] Miller, J. D., McNulty, J. F., Ruck, B. J., Khalfioui, M. A., Vézian, S., Suzuki, M., Osawa, H., Kawamura, N., Trodahl, H. J., Phys. Rev. B 106, 174432 (2022).
[3] Pot, C., W. F. Holmes-Hewett, E-M. Anton, J. D. Miller, B. J. Ruck, and H. J. Trodahl. "A nonvolatile memory element for integration with superconducting electronics." Applied Physics Letters 123, no. 20 (2023).
[4] Pot, C., 2024. Magnetic Devices Using Rare-Earth Nitrides (Doctoral dissertation, Open Access Te Herenga Waka-Victoria University of Wellington).