Description
Silicon spin qubits in gate-defined quantum dots build on the mature semiconductor manufacturing ecosystem, offering a scalable platform for quantum computing. Using spin-3/2 semiconductor holes instead of spin-1/2 electrons enables very fast spin control through the spin-orbit interaction while retaining the key advantages of quantum dot architectures [1-6]. However, the development of silicon hole devices has lagged behind their electron counterparts due to greater sensitivity to disorder and more complex spin physics.
Here, we demonstrate single-qubit gate fidelities of up to 99.8% and a two-qubit gate quality factor of 240, corresponding to a projected physical gate fidelity of 99.7%. These results represent the highest-performance spin qubits reported in natural silicon. Importantly, this performance is achieved in devices built using a 300mm silicon foundry process [7-8], positioning silicon hole spin qubits as a promising route toward scalable quantum CMOS architectures.
References
[1] Liles, S., Halverson, D., et al. Nat Commun 15, 7690 (2024).
[2] Maurand, R., Jehl, X., Kotekar-Patil, D. et al. Nat Commun 7, 13575 (2016).
[3] Piot, N., Brun, B., Schmitt, V. et al. Nat. Nano. 17, 1072–1077 (2022).
[4] Froning, F.N.M., Camenzind, L.C., van der Molen, O.A.H. et al. Nat. Nano. 16, 308–312 (2021).
[5] Camenzind, L.C., Geyer, S., Fuhrer, A. et al. Nat Electron 5, 178–183 (2022).
[6] Hendrickx, N., Franke, D., Sammak, A. et al. Nature 577, 487–491 (2020).
[7] R. Li et al., 2020 IEEE IEDM, San Francisco, CA, USA, pp. 38.3.1-38.3.4 (2020).
[8] N. I. D. Stuyck et al., 2021 Symposium on VLSI Circuits, Kyoto, Japan, 2021, pp. 1-2
| I am the presenting author | Yes |
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