Conveners
M2-7 Low Dimensional Materials and Heterostructures (DCMMP) | Matériaux à basse dimension et hétérostructures (DPMCM)
- Adina Luican-Mayer (University of Ottawa)
Presentation materials
Quantum confinement in two-dimensional (2D) transition metal dichalcogenides (TMDs) offers the opportunity to create unique quantum states that can be practical for quantum technologies. The interplay between charge carrier spin and valley, as well as the possibility to address their quantum states electrically and optically, makes 2D TMDs an emerging platform for the development of quantum...
Atomically thin materials - or two-dimensional (2D) materials – confine electrons at the ultimate thickness, giving rise to electrical and optical properties that can enable new quantum devices. Developing these devices requires large-area and high-quality monolayers. A limitation thus far has been that samples made by mechanical exfoliation techniques, thinning down crystals made of weakly...
Vertically stacking two-dimensional (2D) materials allows for the fabrication of heterostructures with properties not present in their constituent layers, presenting an opportunity to study new quantum phenomena. In twisted bilayers of hexagonal 2D materials, the formation of a moiré pattern can lead to electron confinement and flat bands. In bilayers of hexagonal transition metal...
We describe the electronic and optical properties of MoSe2/WSe2 type-II heterostructure using ab initio based tight-binding (TB) approximation and Bethe-Salpeter equation (BSE) [1]. We start with determining the electronic structure of MoSe2/WSe2 from first principles. We obtain type-II band alignment and conduction band minima at Q points. Then we perform analysis of Kohn-Sham wavefunctions...
With current CMOS technologies approaching their performance limits, nanoscale atomic electronics are poised to provide the next-generation of devices and a continuation of Moore's law. Several promising beyond-CMOS platforms, such as dangling bond (DB) circuitry on hydrogen-passivated silicon require precise knowledge of the location of charges within fabricated atomic structures. To achieve...
Vertical stacking of atomically thin materials offers a large platform for realizing novel properties enabled by proximity effects and moiré patterns. Here, a van der Waals heterostructure consisting of monolayer graphene on in-plane anisotropic layered semiconductor ReS
