CPAD 2026 at Seattle

Session

RDC 3&4 Joint Session

21 Oct 2026, 14:00

Auditorium (Alder Hall)

3. Irradiation study of a high voltage monolithic pixel sensor in 55 nm technology

Hui Zhang

21/10/2026, 14:00

RDC 3 Solid State Tracking

Presentation

The High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) become an attractive technology option for tracking detectors in high energy physics. This technology combines sensor and readout electronics in a single chip, making it compact and efficient. The development of HVCMOS sensor has mainly been implemented with 180 nm or 130 nm technology in the past decades. To explore the small-node...

27. HV-MAPS Sensor Design and Simulations for FCC-ee

Danush Shekar (University of Illinois Chicago (US))

21/10/2026, 14:20

RDC 3 Solid State Tracking

Presentation

The Future Circular Collider e+e- (FCC-ee) is proposed as CERN's next-generation collider experiment for precision measurements of the Higgs and W/Z bosons and the top quark. Its physics program demands vertex detectors with excellent spatial resolution and a low material budget, favoring Monolithic Active Pixel Sensors (MAPS) for their thin, low-power design. We present R&D on High-Voltage...

85. NAPA: design and characterization of MAPS for ns-timing

Lorenzo Rota (SLAC National Laboratory)

21/10/2026, 14:40

RDC 3 Solid State Tracking

Presentation

Tracking detectors for future colliders demand low-mass pixel sensors that combine fine spatial resolution, low power consumption, and timing capability sufficient to reject beam-induced background. MAPS are well suited to these requirements, as they integrate the sensing volume and front-end electronics in a single CMOS process.

The NAPA program develops compact timing pixel front ends...

98. Smartpixels, On-Sensor Machine Learning for Future Pixel Detectors: Regression under a Realistic Front-End Response

Harshul Gupta (University of Illinois Chicago (US))

21/10/2026, 15:00

RDC 3 Solid State Tracking

Presentation

Smartpixels explores on-sensor machine learning inference for silicon pixel detectors, targeting a future upgrade of the CMS detector in the High-Luminosity LHC era. By co-designing ML algorithms with readout ASIC constraints, charged-particle hit parameters are reconstructed directly on the sensor, cutting the data volume sent off-detector and potentially bringing pixel information within...

89. 28 nm Readout ASICs for 3D-Integrated LGAD Sensors with 10 ps-Level Timing Performance

Bojan Markovic (SLAC National Accelerator Laboratory (US))

21/10/2026, 15:20

RDC 4 Readout & ASICs

Presentation

Highly granular precision timing detectors are required to achieve scientific breakthroughs across HEP, NP, BES, and FES applications, and their critical need was highlighted by DOE BRN, European Strategy for Particle Physics, and Snowmass. To enable the development of these detectors, 3D-intgration between advanced sensor wafers and scaled CMOS technology nodes is required but is currently...