Speaker
Description
The High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) become an attractive technology option for tracking detectors in high energy physics. This technology combines sensor and readout electronics in a single chip, making it compact and efficient. The development of HVCMOS sensor has mainly been implemented with 180 nm or 130 nm technology in the past decades. To explore the small-node technology of next generation HVCMOS sensors, a prototype chip has been fabricated for a Multi Project Wafer (MPW) run using 55 nm HVCMOS technology and low-resistivity substrates for next-generation particle detectors. To assess radiation hardness, several chips from this fabrication have been irradiated with 80 MeV protons at room temperature using the Chinese Spallation Neutron Source (CSNS) facility. The irradiation study focused on evaluating key operational parameters such as leakage current, signal-to-noise ratio, and the chip functionality under increasing irradiation dose. In this article, we present the detailed design of this 55 nm HVCMOS pixel sensor, discuss its performance based on radiation tests, and compare the performance with non-irradiated sensors.