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2nd Workshop of the CPAN Network on Instrumentation and Detectors

2–4 Feb 2026
CIEMAT
Europe/Madrid timezone

Technical Secretariat

Session

WG10 Characterization Techniques

4 Feb 2026, 10:00
Salón de Actos "Margarita Salas" (Edificio 1, Planta Baja) (CIEMAT)

Salón de Actos "Margarita Salas" (Edificio 1, Planta Baja)

CIEMAT

Avenida Complutense, 40 28040 Madrid Spain

Conveners

WG10 Characterization Techniques

  • Jordi Duarte Campderros (IFCA (UC-CSIC))
  • Maria Del Carmen Jimenez Ramos (Universidad de Sevilla (ES))

Presentation materials

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  1. 33. WG10 overview
    Dr Jordi Duarte Campderros (IFCA (UC-CSIC)), Dr Maria Del Carmen Jimenez Ramos (Universidad de Sevilla (ES))
    04/02/2026, 10:00
  2. 12. Characterization of SiC Microdosimeters for FLASH Therapy Using Ion Beam Techniques at CNA
    Jairo Antonio Villegas Dominguez (Centro Nacional de Aceleradores (CNA))
    04/02/2026, 10:15
    WG10 Characterization Techniques

    Ion beam-based techniques offer powerful tools for the characterization of semiconductor detectors at the National Accelerator Center (CNA, Seville). In this contribution, SiC microdosimeters for FLASH radiotherapy were studied using Ion Beam Induced Current (IBIC) with the 3 MV Tandem accelerator, complemented by proton beam measurements from the CNA cyclotron. These approaches provide...

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  3. 20. Development of a Non-Invasive Quality Control System for Semiconductor Wafer Inspection
    David Galacho Martínez (IFIC, CSIC-UV)
    04/02/2026, 10:30
    WG10 Characterization Techniques

    Group II-VI semiconductors are being explored for room-temperature X-ray imaging due to their excellent properties, especially high resistivity and wide bandgap. However, their performance is often limited by crystalline defects and surface imperfections, which act as charge traps and increase leakage currents. Consequently, wafer inspection to ensure the quality of base materials through...

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  4. 23. Characterizaton of Wide Band Semiconductors using Two-Photon Absorption Transient Current Technique (TPA-TCT): Methodology and Experimental Applications on SiC samples
    Cristian Quintana San Emeterio (Universidad de Cantabria and CSIC (ES))
    04/02/2026, 10:45
    WG10 Characterization Techniques

    The characterization of semiconductor materials is a key aspect in the development of new technologies of electronic devices and radiation-hard detectors. In this context, the Two Photon Absorption Transient Current Technique (TPA-TCT) has an important role as non-destructive tool, which can provide high spatial resolution to probe internal electrical properties and charge transport mechanisms...

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