Speaker
Description
The characterization of semiconductor materials is a key aspect in the development of new technologies of electronic devices and radiation-hard detectors. In this context, the Two Photon Absorption Transient Current Technique (TPA-TCT) has an important role as non-destructive tool, which can provide high spatial resolution to probe internal electrical properties and charge transport mechanisms of the semiconductor devices under test. This technology is finding its place in the context of wide band semiconductors (WBS) characterization, and additional variants such as higher-order multiphoton generation are currently being evaluated.
In this presentation, we report on the applications of TPA-TCT to the characterization of semiconductor detectors, focusing on studies of material response (particularly interesting in irradiated samples), charge depletion behavior vs bias voltage, reverse engineering of device structures, and the reconstruction of electric field maps. The measurements performed were made on silicon carbide samples, to investigate their possible role as alternatives to silicon devices in the context of High Energy Physics or Medical applications. Apart from the obtained results, the high versatility of this technique and the broad range of options it enables are clearly demonstrated.