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Description
Group II-VI semiconductors are being explored for room-temperature X-ray imaging due to their excellent properties, especially high resistivity and wide bandgap. However, their performance is often limited by crystalline defects and surface imperfections, which act as charge traps and increase leakage currents. Consequently, wafer inspection to ensure the quality of base materials through optical means prior to hybridization could positively impact detector production yield.
This work focuses on the development of a comprehensive quality-control protocol to characterize semiconductor base materials. The methodology combines complementary non-destructive techniques: Scanning Electron Microscopy (SEM) is employed to assess surface morphology, while standard IR transmission microscopy identifies bulk defects. Furthermore, cross-polarized IR transmission imaging is utilized to map internal stress fields and lattice distortions induced by crystalline imperfections. This multi-modal approach ensures a rigorous evaluation of both surface topography and internal structural integrity, guaranteeing chip functionality and reliability.