Speaker
Jairo Antonio Villegas Dominguez
(Centro Nacional de Aceleradores (CNA))
Description
Ion beam-based techniques offer powerful tools for the characterization of semiconductor detectors at the National Accelerator Center (CNA, Seville). In this contribution, SiC microdosimeters for FLASH radiotherapy were studied using Ion Beam Induced Current (IBIC) with the 3 MV Tandem accelerator, complemented by proton beam measurements from the CNA cyclotron. These approaches provide spatially resolved information not only on charge collection, but also on technological information such as depletion width and dead layer thickness. Furthermore, the detector performance under conditions relevant for high ionization densities, including generated charge, energy resolution, and potential plasma effects, was also investigated.
Author
Jairo Antonio Villegas Dominguez
(Centro Nacional de Aceleradores (CNA))
Co-authors
Carmen JIMENEZ RAMOS
(Centro Nacional de Aceleradores (CNA))
Carmen Torres
(Centro Nacional de Aceleradores (CNA))
Dr
Celeste Fleta
(Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (ES))
Consuelo Guardiola
(IMB-CNM (CSIC))
Demetrio Hermenegildo Saucedo Cuberes
(Centro Nacional de Aceleradores (CNA))
Francisco Javier García López
(Centro Nacional de Aceleradores (CNA))
Nuria Fuster Martinez