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25th International Workshop on Radiation Imaging Detectors.

30 June 2024 to 4 July 2024
FMDUL
Europe/Lisbon timezone

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Session

Sensor Materials

2 Jul 2024, 14:00
Main Auditorium (FMDUL)

Main Auditorium

FMDUL

Main Auditorium of the Faculty of Dental Medicine at the University of Lisbon (Faculdade de Medicina Dentária da Universidade de Lisboa)

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  1. 252. TCAD modeling of Ferroelectric Materials for Enhanced Electronic Device Efficiency
    Arianna Morozzi (INFN, Perugia (IT))
    02/07/2024, 14:00
    Invited talk

    The integration of negative capacitance (NC) into field-effect transistor (FET) devices, offers a promising solution to overcome the fundamental limitations in power dissipation, commonly referred to as Boltzmann tyranny. NC, characterized by a voltage increase with decreasing charge, has long been a theoretical concept but presents practical challenges in electronic device implementation....

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  2. 27. Chromium compensated gallium arsenide sensor evaluation using photon counting readout electronics
    Dr Juha Kalliopuska (Advafab Oy)
    02/07/2024, 14:30
    Oral Communication

    Gallium arsenide is extensively studied for about seven decades as an excellent material for semiconductor lasers, LEDs, and microwave electronics. GaAs has noticeable advantages over silicon and Cd(Zn)Te for radiation detectors. Particularly GaAs has higher electron mobility compared to Si and Cd(Zn)Te; higher average atomic number compared to Si; and lower probability and energy of the...

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  3. 135. Characterisation of Redlen HF-CdZnTe at >10$^6$ ph s$^{-1}$ mm$^{-2}$ using HEXITEC$_{\mathrm{MHz}}$
    Ben Cline
    02/07/2024, 14:50
    Oral Communication

    4$^{\mathrm{th}}$ generation light sources will see many facilities upgrade to Diffraction Limited Storage Rings, providing brighter photon beams with greater coherence over a larger energy range. For example, Diamond-II will result in a 10-100× decrease in the electron horizontal emittance alongside an increase in the electron-beam energy from 3 to 3.5 GeV. One driver highlighted within the...

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  4. 202. Evaluation of a Novel Large-Area GaAs:Cr Sensor for Photon Science Applications
    Kirsty Paton (Paul Scherrer Institut)
    02/07/2024, 15:10
    Oral Communication

    GaAs:Cr is of great interest for use as the sensor material of hybrid pixels detectors (HPDs) at fourth-generation light sources, due to its increased stopping power at higher (> 20 keV) photon energies compared with standard Si sensors [1]. Many such facilities will offer increased photon flux at higher energies, opening up new experimental possibilities. This includes X-ray fluorescence...

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  5. 239. Low Gain Avalanche Silicon Detectors: an experimental study and modeling for high resolution X-ray spectroscopy
    Dr Filippo Mele (Politecnico di Milano)
    02/07/2024, 15:30
    Oral Communication

    Radiation and particle semiconductor detectors incorporating electron-hole multiplication layers have received a growing interest within the scientific community in the last decade [1-4]. In particular, devices operating in the proportional charge multiplication region with moderate gains (< 50), commonly called Low Gain Avalanche Detectors (LGAD), have been found very challenging for high...

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