26th Australian Institute of Physics Congress and the Australian and New Zealand Conference on Optics and Photonics

Session

COMMAD: Silicon and SiC Devices and Characterisation

COMMAD

11 Dec 2026, 09:00

Belinda Hutchinson Building (The University of Sydney )

Conveners

COMMAD: Silicon and SiC Devices and Characterisation

• Stephen Bremner (UNSW Sydney)

321. Keep it Simple: Development of Ion-Implantation Free Silicon Carbide Power Schottky Diodes with High Performance

11/12/2026, 09:00

1

COMMAD - Optoelectronic and Microelectronic Materials and Devices

Invited talk

Silicon carbide (SiC) has been at the heart of the commercial power semiconductor industry for over two decades, owing to its larger breakdown electric field and superior thermal conductivity compared to silicon. In that time, there has been significant research and development into optimizing these devices. The main SiC rectifier is the SiC Schottky diode, which is formed simply using an...

347. Photo-Induced Current Transient Spectroscopy of Defects in Ion Implanted High-Resistivity Silicon

Awsaf AlSulami (University of Melbourne)

11/12/2026, 09:30

1

COMMAD - Optoelectronic and Microelectronic Materials and Devices

Contributed Oral

Photoinduced Current Transient Spectroscopy (PICTS) is a technique developed to identify electrically-active charge traps in high-resistivity epitaxial substrates, where conventional capacitance-based methods are ineffective. [1] The ability to probe high-resistivity materials makes PICTS well-suited to the characterisation of silicon materials for quantum device applications. High-resistivity...

487. Electrically Detected Magnetic Resonance Characterisation of the Silicon Spin Environment

Nicholas Collins (The University Of Manchester)

11/12/2026, 09:45

COMMAD - Optoelectronic and Microelectronic Materials and Devices

Contributed Oral

Isotopically enriched Si$^{28}$ produced by FIB enrichment has reached impurity levels greater than industry standard techniques [1-2]. It remains to be demonstrated that this material can achieve quantum measurements with lifetimes expected of this enrichment level.
We demonstrate electron spin resonance (ESR) transitions in Si devices using our in-house built electrically detected magnetic...

708. Surface, Doping and Temperature Control of Hydrogen Charge States, Diffusion and Boron Deactivation in Silicon

Riley Fittock (UNSW)

11/12/2026, 10:00

COMMAD - Optoelectronic and Microelectronic Materials and Devices

Contributed Oral

Hydrogen is a common impurity within semiconductors and devices. It is often introduced into devices intentionally to passivate bulk and surface defects, due to its high diffusivity and presence in many treatments it is also often introduced unintentionally. This is particularly problematic for boron-doped silicon as hydrogen will almost always electrically deactivate boron when introduced....

610. A pathway for opto-electronic circuits on (porous) silicon

11/12/2026, 10:15

COMMAD - Optoelectronic and Microelectronic Materials and Devices

Contributed Oral

Porous silicon is a unique nano-material exhibiting low optical losses in the infrared, high electrical resistivity (50 GΩ.cm) and low thermal conductivity (0.15 W/m.K). Our 100 µm thick 80% porosity porous silicon layer is formed through the annodisation of a 2” silicon wafer (p-type 0.1 Ω.cm), using a HF/Ethanol electrolyte followed by critical point drying. By laser writing onto the...