Speaker
Description
Isotopically enriched Si$^{28}$ produced by FIB enrichment has reached impurity levels greater than industry standard techniques [1-2]. It remains to be demonstrated that this material can achieve quantum measurements with lifetimes expected of this enrichment level.
We demonstrate electron spin resonance (ESR) transitions in Si devices using our in-house built electrically detected magnetic resonance (EDMR) spectroscopy system. We characterise donors in Si to test the compatibility of ion-beam enriched Si$^{28}$ with quantum measurement.
Samples used in this study consist of an internally fabricated photodiode with an on-chip waveguide strip-line antenna. This is used to induce ESR spin transitions of donor states in the active region of the device through creation of a spin pair between a donor electron and an acceptor state identified as a dangling bond at the Si/SiO${_2}$ interface. The samples are characterised at 10 K from 0 to 50 mT using a 405 nm laser with 20 to 800 MHz microwave radiation.
With a broad range of magnetic fields and microwave frequencies, we characterise transitions of implanted donor species such as P$^{31}$ and As$^{75}$. Through these measurements we characterise the ESR transitions and the effects of the local environment.
[1] Acharya, R., Coke, M., Adshead, M. et al. Highly 28Si enriched silicon by localised focused ion beam implantation. Commun Mater 5, 57 (2024). https://doi.org/10.1038/s43246-024-00498-0
[2] M. Coke, M. Adshead, R. Acharya, et al. “Fabrication of Planar Highly Enriched Silicon by 28Si Focused Ion Beam and Subsequent Experimental Optimization.” Adv. Electron. Mater.11, no. 18 (2025): e00233. https://doi.org/10.1002/aelm.202500233
| I am the presenting author | Yes |
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