Speaker
Nepomuk Otte
(Georgia Institute of Technology)
Description
Silicon photomultipliers (SiPMs) have had a transformative impact on experiments in high-energy physics and astrophysics. However, SiPMs face intrinsic limitations in their response to wavelengths below 300 nm, which is crucial for liquid noble scintillation detectors. In this study, we explore AlGaN and GaN semiconductors, which feature a tunable band gap and improved sensitivity in the ultraviolet (UV) range. With the availability of sufficiently clean substrates, we successfully fabricated single GaN photodiodes and demonstrated their UV sensitivity and Geiger-mode operation. I will provide a status update and present the results from our latest devices fabricated this year.
Authors
Alexandra Dolgashev
Davide Balzerani
Nepomuk Otte
(Georgia Institute of Technology)
Russel Dupuis
Theeradetch Detchprohm
