Speaker
Description
Low Gain Avalanche Detectors (LGADs) based on 4H-Silicon Carbide (SiC) are
promising for fast timing applications in high radiation environments, offering advan-
tages over traditional Si LGADs due to their superior material properties. A key chal-
lenge remains the design of robust edge termination that maintains high breakdown
and stable gain after heavy irradiation. In this work, we present detailed TCAD sim-
ulations for 4H-SiC LGAD structure using multiple Junction Termination Extensions
(JTEs) with deep p+ guard implants, comparing different sensor thicknesses. The elec-
tric field profiles, charge collection, and timing resolution before and after irradiation
are evaluated. In addition, we simulate thermal annealing cycles and quantify their
effect on defect removal and field recovery. The results of this study provide design
guidance and post-irradiation treatment to maximize SiC-LGAD lifetime and timing
precision for HL-LHC or future collider experiments.
