Speaker
Description
State-of-the-art extreme ultraviolet (EUV) lithography relies on laser-produced plasma (LPP) sources, which generate 13.5 nm light through thermal emission from laser-irradiated tin droplets. While LPP technology has enabled high-volume manufacturing at leading-edge nodes, it faces fundamental limitations in average power, spectral purity, and wavelength scalability. Compact accelerator-driven free-electron lasers (FELs) provide a solution to each of these limitations. Rapid progress in laser wakefield accelerator (LWFA) performance and early demonstrations of LWFA-driven FELs suggest this approach is maturing toward technological readiness for lithographic light source applications. At Inversion Semiconductor, we are developing a next-generation EUV light source consisting of an LWFA injector, damping ring, and self-seeded medium-gain FEL cavity. The first-generation system is designed around a 1.25 GeV electron beam, targeting >200 W average output power within a facility footprint of approximately 40 m × 12 m (ring circumference ~110 m), with a scaling pathway to >1 kW in future iterations. This poster presents the current state of design and simulation efforts across each of these subsystems, toward the realization of a compact, high-power, wavelength- and polarization-tunable EUV source for advanced semiconductor lithography.
| Working group | WG6 |
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