Speaker
Description
Excellent giant dielectric properties (ExGDPs) of dielectric oxides have been widely investigated due to their significant potential for many applications, especially for ceramic capacitors. However, low loss tangent (tan$\delta$) and temperature coefficient ($\Delta$$\varepsilon$$^,$(T)/$\varepsilon$$^,$$_\text{RT}$) are difficult to achieve. In this presentation, we show systematic strategies for moving beyond conventional material problems in order to obtain a material that meets the practical requirements. The electron-pinned defect-dipole (EPDD) and internal/surface barrier layer capacitor (IBLC/SBLC) effects in TiO$_\text{2}$-based materials are proposed for obtaining the ExGDPs with high ultra-low tan$\delta$ (<0.01) and very high dielectric permittivity (>104) with temperature coefficient less than $\pm$ 15% over the temperature range of -55 – 200 $^{\circ}$C. The relevant electric polarization mechanisms in the TiO$_\text{2}$2-based materials are described.
