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Description
This work presents fabrication and characterization of a p-n junction in Si. The p-n junction was fabricated simply by thermal diffusion of n-type Si wafer with boron deposited on the surface. The depth of the p-n junction was primarily predicted by the Fick’s law of diffusion. Boron deposition was carried out in a vacuum system using an electron beam evaporator. The deposited samples were annealed in the same vacuum system to introduce boron diffusion into the Si substrate. V-I curve measurements were performed to characterize the electrical properties of the p-n junction. Appropriated depth and width of depletion region will be discussed for application of X-ray detectors.
Keywords: boron diffusion, p-n junction, thermal annealing, electron beam evaporation, silicon semiconductor
