Description
Controlled modification of diamond surfaces is important for quantum technologies, biosensing, photonics, and electronic devices. Conventional processing methods may introduce surface damage or contamination and may provide limited control at shallow removal depths. Previous studies have reported UV laser etching of diamond, with the etch rate increasing approximately quadratically with laser intensity. This behaviour is consistent with a two-photon contribution, although the removal mechanism remains unresolved, including the role of free carrier generation near the surface.
To better understand the mechanism, this study compares UV laser etching as a function of boron concentration over the range 10¹⁶ to 10¹⁹ cm⁻³. It aims to measure the effect of boron doping on the etch rate and etch-pattern morphology to determine whether the etching process is strongly influenced by impurity-generated free carriers.
Nominally (100)-oriented samples were exposed to a range of fluences and exposure times. Etched depths were measured using optical profilometry, and etch rates were determined from linear fits of depth versus incident pulse number. Repeated measurements assessed uncertainties related to laser power, beam size, sample position, and focal position. For all doping, the etch rates were within experimental uncertainty. Scanning electron microscopy also showed similar nanoscale surface patterns on intrinsic and doped diamond. These results indicate a minor role of impurities in the etch process and suggest that the etch process is chiefly an intrinsic property of diamond.
| I am the presenting author | Yes |
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