Description
Terahertz (THz) technologies are increasingly important for imaging, spectroscopy, sensing and future wireless communications, creating demand for compact, sensitive and scalable detector platforms [1]. Group III–V semiconductor nanostructures offer unique opportunities for THz photonics through their high charge-carrier mobility, controllable charge dynamics, strong electromagnetic anisotropy and compatibility with advanced device architectures.
I will discuss recent advances in THz detectors and measurement technologies based on III–V semiconductor nanostructures. By studying charge dynamics in nanowires we have created monolithic detectors capable of recovering the full polarisation state of THz radiation, opening new opportunities for polarimetric imaging and metamaterial characterisation [2]. More recently, we demonstrated wafer-scalable InAs nanowire receivers for broadband THz detection at room temperature using telecommunications-wavelength optical excitation. This approach is promising for fibre-coupled THz systems and large-area detector arrays [3].
The development of these devices has advanced methods to determine the optoelectronic properties of semiconductors and semiconductor nanostructures via THz conductivity spectroscopy. Resonance-amplified THz near-field spectroscopy has enabled measurements of ultrafast conductivity dynamics in individual nanowires, overcoming limitations of conventional far-field techniques [4]. Our studies have also shown how subwavelength geometry influences THz conductivity spectra and established approaches for separating geometric resonances from intrinsic carrier transport properties, enabling accurate extraction of key electronic parameters relevant to device performance [5].
Together, these results demonstrate how semiconductor nanostructures are enabling new detector concepts and functionalities in the THz regime, while highlighting the critical role of advanced THz spectroscopy in guiding device design, optimisation and scale-up.
References
[1] Leitenstorfer et al., J. Phys. D 56, 223001 (2023).
[2] Peng et al., Science 368, 510–513 (2020).
[3] Peng et al., Nat. Commun. 15, 103 (2024).
[4] Norman et al., Nano Lett. 24, 15716–15723 (2024).
[5] Wagner et al., APL Photonics 10, 076123 (2025).
| I am the presenting author | Yes |
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