Description
Space radiation being a safety risk to astronauts and electronics damage poses a threat to any satellite mission and consequently associated with huge economical losses. Radiation sensors predicting damage of electronics and evaluate radiation hazard for astronauts under conditions of unpredictable space weather allow they timely mitigation.
Talk will cover development of silicon sensors for Nonionizing Energy Loses (NIEL) and Total Ionizing Dose (TID) measurements. The response of NIEL sensors based on p-i-n structures was studied in a fast neutron field, wide energy range of protons (2-200)MeV and heavy ions (10-1000) MeV/u mimicking solar particle events (SPE) and galactic cosmic rays (GCR) environment, respectively. It was demonstrated that response of them in terms of Displacement Damage Dose (DDD) is independent on type of radiation and can be predicted using 20 MeV electron beam. Effect of the partial volume irradiation with heterogeneous DDD in the p-i-n sensors with low energy protons typical for LEO has been studied experimentally and modelled with COMSOL for interpretation of their response.
The response of TID sensors based on MOS structure has been investigated for ionizing radiation with a wide range of LET and the dose rate up to 109 Gy/s. It was demonstrated that the TID response is dose rate independent for ionizing radiation of the same quality. Irradiation of the TID sensor with DDD corresponding to 1 MeV neutron equivalent fluence about 1013 cm-2 is not affecting TID response.
The LET sensors for predicting a Single Events Upset and dose equivalent for astronauts based on array of 3D cylindrical shape micron size p-i-n diodes fabricated on the (2-10) micron thick device layer of the Silicon on Insulator were investigated in a spectral field typical for GCR. Their response was in agreement with predicted by Monte Carlo.
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