26th Australian Institute of Physics Congress and the Australian and New Zealand Conference on Optics and Photonics

Electrical driving of hole spin states in planar silicon MOS device by g-matrix modulation

Not scheduled

20m

Belinda Hutchinson Building (The University of Sydney )

Invited talk AIP | Condensed Matter & Materials (CMM)

Speaker

Scott Liles (UNSW)

Description

The global effort to develop quantum computers is driving the search for scalable methods to manufacture quantum chips and qubits. One promising pathway is to adapt the mature and highly scalable silicon manufacturing processes that underpin modern electronics, enabling quantum chips to be fabricated alongside conventional computer chips. This approach has generated substantial research interest across several silicon-based qubit modalities.

Hole spins in silicon quantum dots are emerging as a highly promising qubit platform. Their appeal lies in strong intrinsic spin-orbit coupling, which enables fast, coherent, and fully electrical spin control. However, spin-orbit coupling is challenging to optimize experimentally because it enables multiple spin-driving mechanisms while also increasing susceptibility to charge noise. In this work [1], we perform a systematic study of spin control mechanisms in a silicon hole quantum dot. Using the g-matrix formalism, we disentangle the contributions from different spin-driving mechanisms and identify regions where the spins are less sensitive to charge noise. These results improve our understanding of spin driving in an industrially relevant architecture and help establish operating conditions for rapid and coherent manipulation of hole qubits.

[1] - Aaquib Shamim, Scott D. Liles, et al. "Electrical driving of hole spin states in planar silicon MOS device by g-matrix modulation." arXiv preprint arXiv:2603.02746 (2026).