Description
Realising the potential of quantum technologies in the solid state at room temperature demands compatibility with existing electronics and semiconductor fabrication infrastructure. Silicon carbide (SiC) is a compelling candidate: it underpins a mature global power-electronics industry and hosts native quantum defects that, while long considered a nuisance for device performance, may prove to be its greatest asset.
Here we investigate optical charge state control in high-purity semi-insulating (HPSI) 4H-SiC hosting a dense ensemble of silicon vacancy (V_Si), divacancy (VV), and other impurities. Following established optical charge conversion techniques [1], we demonstrate that charge state conversion of V_Si drives a corresponding conversion of the near-infrared divacancy (VV), enabling optical control over VV emission in the 1070–1200 nm range. Critically, this mechanism operates at room temperature, opening a pathway to ambient-condition imaging of divacancy charge states in a technologically relevant material.
Building on recent photocurrent imaging of NV centres in diamond [2], we further aim to map photocurrent distributions and charge conversion dynamics in SiC, leveraging its compatibility with existing semiconductor fabrication. Together, these results position HPSI 4H-SiC not merely as a substrate for power devices, but as a practical, industry-ready platform for quantum sensing and beyond.
[1] Wolfowicz et al., Nat. Commun. 8, 1876 (2017)
[2] Wood et al., Adv. Mater. 36(40):e2405338 (2024)
| I am the presenting author | Yes |
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