PSD14: International Conference on Position Sensitive Detectors

Radiation damage effects on the intra-pixel timing performance in planar silicon sensors

Not scheduled

20m

Mile End Campus: Graduate Centre Foyer and Peston Lecture Theatre (Queen Mary University of London, London, UK)

Poster Position Sensitive Fast Timing Detectors

Speaker

Ceyhan Sam (University of Birmingham (GB))

Description

Fast and radiation-hard silicon timing detectors with tracking functionality are becoming increasingly important for future generation experiments. We present the intra-pixel timing performance of irradiated planar silicon sensors and compare with previous results obtained with non-irradiated devices. Detailed intra-pixel maps reveal structured non-uniformities in the intra-pixel timing performance, which are discussed in the context of the pixel electrode weighting field and radiation damage mechanisms. This study was conducted using 200 $\mu$m n-on-p planar silicon pixel sensors bonded to the TDCpix ASIC, originally developed for the NA62 GigaTracKer. The hybrids were irradiated at the University of Birmingham MC40 cyclotron to fluences of $5\times10^{13}$ and $1\times10^{14}$ 1 MeV n.eq / cm$^2$. The devices were studied using the TimePix4 telescope, located on the H8 beamline at the CERN Super Proton Synchrotron. The TimePix4 telescope provided reconstructed tracks with a spatial resolution of $\mathcal{O}$(10 $\mu$m) at the hybrid position. This made it possible to study the timing performance inside the large 300 $\mu$m pixels as a function of the in-pixel coordinates. The association of TimePix4 tracks with TDCpix hits was provided by hardware level synchronization and a custom space-time alignment algorithm.