Speaker
Description
Pristine and neutron-irradiated silicon carbide (SiC) p-in-n diodes, fabricated at IMB-CNM with a 50-µm active thickness, were systematically characterized using the Two-Photon Absorption Transient Current Technique (TPA-TCT) at the University of the Basque Country (UPV/EHU) laser facility. The study evaluates radiation-related performance metrics—charge-collection efficiency, transient response, carrier transit characteristics, and bias-dependent stability—before and after irradiation. Following neutron exposure, we observe a marked enhancement of the induced signal consistent with radiation-triggered charge multiplication. Analysis of the transient waveforms and their voltage evolution constrains plausible gain scenarios linked to irradiation-induced defect populations and local field enhancements. Beyond the characterization of sensor properties as function of fluence and bias, the emergence of post-irradiation multiplication reveals a previously unexploited operating regime for SiC detectors and underscores the need for further dedicated studies.
