Speaker
Description
Transparent conducting oxides require precise doping to balance transparency and conductivity for electronics, photovoltaics, and sensors. This study identifies a critical 4 at.% Mg doping threshold in spray pyrolyzed SnO₂ thin films. Films with 0–8 at.% Mg were deposited from 0.1 M SnCl₄•5H₂O + MgCl₂•6H₂O at 350 ± 5 °C and annealed at 450 °C. X-ray diffraction confirmed rutile phase stability up to 4 at % Mg, with crystallite refinement from about 35 to 22 nm and increased microstrain from Mg²⁺ substitution. SEM/EDS indicated a uniform nanostructure and successful Mg2+-incorporation. UV–Vis measurements showed over 75 % transmittance and bandgap tuning from 3.65 eV to 3.85 eV then to 3.55 eV, consistent with Burstein–Moss and disorder effects. Hall measurements revealed n type conductivity peaking at 4 at.% Mg, with optimal carrier concentration and mobility and sheet resistance around 450 Ω/sq, before defect scattering reduced performance at higher doping. These findings establish spray pyrolyzed 4 at.% Mg:SnO₂ as an ITO competitive transparent conducting oxide, with a figure of merit of 1.2 × 10⁻³ Ω⁻¹, suitable for scalable transparent conductive applications.
| Keyword-1 | spray pyrolysis |
|---|---|
| Keyword-2 | transparent conducting oxides |
| Keyword-3 | doping threshold |