21–26 Jun 2026
U. Ottawa - Learning Crossroads (CRX) Building
America/Toronto timezone
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Voltage-Driven Electro-Spray and Optoelectronic Evaluation of Gadolinium-Doped Zirconium Sulphide Thin Films for Enhanced Optoelectronic Applications

23 Jun 2026, 18:00
1h 30m
U. Ottawa - Learning Crossroads (CRX) Building

U. Ottawa - Learning Crossroads (CRX) Building

100 Louis-Pasteur Private, Ottawa, ON K1N 9N3
Poster (Non-Student) / Affiche (Non-étudiant(e)) Atomic, Molecular and Optical Physics, Canada / Physique atomique, moléculaire et photonique, Canada (DAMOPC-DPAMPC) DAMOPC Poster Session & Student Poster Competition | Session d'affiches DPAMPC et concours d'affiches étudiantes

Speaker

Dr Samuel Oghenemega Shaka (Delta State University, Abraka, Nigeria)

Description

Samuel O. Shaka, Godfrey E. Akpojotor, Merrious O. Ofomola, Cletus Olisenekwu.

The zirconium sulphide (ZrS) metal has long been considered the most attractive material with fascinating physical, chemical, and optoelectronic properties. In this study, Gadolinium (Gd)-doped zirconium sulphide (ZrS/Gd) thin films were successfully deposited on fluorine-doped tin oxide (FTO) substrates using an electro-spray deposition technique at varying deposition voltages of 10.5 V, 11.0 V, and 11.5 V, aimed at optimizing their structural, optical, and electrical properties for photonic and optoelectronic applications. Comprehensive characterization of the films included structural, optical, electrical, and morphological analyses. X-ray Diffraction (XRD) was used to determine crystal structure and crystallite size, while Scanning Electron Microscopy (SEM) and Energy-Dispersive X-ray (EDX) verified surface morphology and elemental composition. Optical properties were obtained using a UV-Visible spectrophotometer, and electrical conductivity was measured with a four-point probe system. The result showed that UV–Vis spectroscopy enhanced absorbance in the UV region (300–400 nm), with 0.75 a.u absorbance at 11.5 V, while transmittance peaked at ~85% for the 11.5 V sample in the visible range. The calculated optical bandgap values decreased from 3.62 eV at 11.5 V to 3.21 eV at 10.5 V, indicating improved photon absorption with increased voltage. Optical conductivity reached a maximum of 0.73 S/m at 11.5 V, and refractive index peaked at 3.0 around 3.4 eV photon energy. Electrical analysis showed enhanced conductivity, increasing from 1.65 S/m in the undoped ZrS to 1.89 S/m at 11.5 V, while resistivity dropped from 0.61 Ω·m to 0.53 Ω·m. XRD analysis confirmed improved crystallinity and reduced dislocation density at higher voltages, with crystallite size ranging from 178 nm to 200 nm. SEM micrographs revealed uniform film deposition and nanoparticle agglomeration with no pinholes. These findings show that Gd doping and voltage-controlled deposition significantly enhance the optoelectronic properties of ZrS thin films, making them promising candidates for optoelectronics and photonics devices.

Keyword-1 Zirconium Sulphide
Keyword-2 Electrical Conductivity
Keyword-3 Gadolinium

Author

Dr Samuel Oghenemega Shaka (Delta State University, Abraka, Nigeria)

Co-authors

Prof. Godfrey Ejiroghene Akpojotor (Delta State University, Abraka, Nigeria) Prof. Merrious Oviri Ofomola (Delta State University, Abraka, Nigeria) Mr Cletus Olisenekwu (Delta State University, Abraka, Nigeria)

Presentation materials