Speaker
Clara Nellist
(LAL-Orsay (FR))
Description
In the framework of the HL-LHC upgrade, the ATLAS experiment plans to introduce an all-silicon inner tracker with the HL-LHC upgrade to cope with the elevated occupancy.
To investigate the suitability of pixel sensors using the proven planar technology for the upgraded tracker, the ATLAS Planar Pixel Sensor R&D Project (PPS) was established comprising 19 institutes and more than 90 scientists. Main areas of research are
- performance assessment and improvement of planar pixel sensors at HL-LHC fluences
- the achievement of slim or active edges to provide low geometric inefficiencies without the need for shingling of modules
- establishment of reliable device simulations for severely radiation-damaged pixel detectors
- the exploration of possibilities for cost reduction to enable the instrumentation of large areas with pixel detectors
The presentation will give an overview of the R&D project and highlight accomplishments, among them
- beam test results with planar sensors up to innermost layer fluences (>$10^{16}$n$_{eq}$/cm$^2$)
- measurements obtained with irradiated thin edgeless n-in-p pixel assemblies
- recent studies of the SCP technique to obtain almost active edges by post-processing already existing sensors based on scribing, cleaving and edge passivation
- update on prototyping efforts for large areas: sensor design improvements, 6” wafer production experience, 8” wafer production possibilities, concepts for low-cost hybridisation
Together, these results will allow an assessment of the state-of-the-art with respect to radiation-hard position-sensitive tracking detectors suited for the instrumentation of large areas.
Author
Daniel Muenstermann
(Universite de Geneve (CH))
