Speaker
Andrew Clarke
(T)
Description
The Centre for Electronic Imaging (CEI) has an active programme of evaluating and designing CMOS image sensors with high quantum efficiency for applications in near-infrared and X-ray photon detection. This paper describes the performance of devices made on a high resistivity 50μm thick substrate with a particular focus on determining the depletion depth and the quantum efficiency. The test devices contain 8x8 and 16x16 pixel arrays using CCD-style charge collection and manufactured in a low voltage CMOS process by ESPROS Photonics Corporation.
The measurements of depletion depth will be completed as part of this study and involve a combination of semiconductor device modelling and measurements of the device Quantum Efficiency (QE). Knowledge of the theoretical depletion depth is also essential, so semiconductor models of the devices are produced using Silvaco TCAD. By biasing the devices over a range of voltages, the depletion depth will change, allowing QE models to be calibrated.
Author
Andrew Clarke
(T)
Co-authors
Prof.
Andrew Holland
(The Open University)
Dr
Konstantin Stefanov
(The Open University)
Dr
Nicholas Johnston
(The Open University)
