PSD10: 10th International Conference on Position Sensitive Detectors

Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC

12 Sept 2014, 10:10

20m

AP1&2 (University of Surrey)

Oral Paper Detectors for High Radiation and Extreme Environments Session 15: Detectors for High Radiation and Extreme Environments

Speaker

Stefano Terzo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)

Description

Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 μm, produced at CiS, and 100-200 μm thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-out chips. The thin sensors are designed for high energy physics collider experiments to ensure radiation hardness at high fluences. Moreover, the active edge technology of the VTT production maximizes the sensitive region of the assembly allowing for a reduced overlapping of the modules in the pixel layer closer to the beam pipe. The CiS production includes also four chip sensors that approach the module geometry planned for the outer layers of the ATLAS pixel detector upgrade to be operated at the HL-LHC. The modules have been characterized using radioactive sources in the laboratory and with high precision measurements at beam tests to investigate the hit efficiency and charge collection properties at different bias voltages and particle incidence angles. The performance of the different sensor thicknesses and edge designs are compared before and after irradiation up to a fluence of 1.4×10^16 n_eq/cm^2.

Presentation materials

Slides

2014_09_PSD10_Surrey.pdf