Speaker
Dr
Panja-Riina Luukka
(Helsinki Institute of Physics HIP)
Description
Pad and strip detectors processed on high resistivity n-type magnetic Czochralski silicon were irradiated to several different fluences with protons. The pad detectors were characterized with Transient Current Technique (TCT) and the full-size strip detectors with a reference beam telescope and 225 GeV muon beam. The TCT measurements indicate a double junction structure and space charge sign inversion in MCz-Si detectors after 5x10^14 neq/cm^2 fluence. In the beam test a S/N of 41 was measured for a non-irradiated MCz-Si sensor, S/N of 25 for a sensor irradiated with 1x10^14 1 MeV neq/cm^2, and a S/N of 19 for a sensor irradiated with 5x10^14 1 MeV neq/cm^2.
Author
Dr
Panja-Riina Luukka
(Helsinki Institute of Physics HIP)
