Speaker
Fabian Georg Huegging
(Unknown)
Description
Hybrid pixel detectors which will be operated in experiments after the luminosity upgrade of LHC, have to survive very high radiation doses up to $10^{16}~$1~MeV n$_{eq}$ per cm$^2$. Therefore, new sensor concepts exceeding the radiation tolerance of the currently used DOFZ planar n-in-n silicon sensors are under investigation. Among them are 3D active edge silicon detectors, single crystal or polycrystalline chemical vapor deposition (CVD) diamonds or n-in-p planar processed silicon detectors on MCz or EPI p-type bulk material. These sensor concepts will be presented and their prospects will be discussed using the experience gained with prototype devices which were bump bonded to ATLAS pixel frond-end electronics. Recent results coming from lab measurements or test beams will be shown.
Author
Fabian Georg Huegging
(Unknown)
