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18–23 Jun 2023
University of New Brunswick
America/Halifax timezone
Welcome to the 2023 CAP Congress Program website! / Bienvenue au siteweb du programme du Congrès de l'ACP 2023!

(G*) (POS-12) MPCVD Diamond Films with varying Nitrogen Doping Times : Effect on NV Center Synthesis

20 Jun 2023, 17:36
2m
Richard J. Currie Center (University of New Brunswick)

Richard J. Currie Center

University of New Brunswick

Poster Competition (Graduate Student) / Compétition affiches (Étudiant(e) 2e ou 3e cycle) Plasma Physics / Physique des plasmas (DPP) DPP Poster Session & Student Poster Competition (3) | Session d'affiches DPP et concours d'affiches étudiantes (3)

Speaker

William Davis (University of Saskatchewan)

Description

NV centers in a diamond crystal consist of a substitutional nitrogen atom next to a lattice vacancy. These commonly appear in two distinct charge states, the neutral NV center (NVo) and the negatively charged NV center (NV). While the more commonly formed state is the NVo , the NV center has S = 1 fine structure that has important magnetic field dependent fluorescence properties due to its trapped electron. Fluorescence of the NV center has many applications include bio-labelling, thermometry, magnetometry, and quantum information, among many others. Research to improve the uniformity and replicability of manufactured NV center-containing films is of great importance. Microwave plasma assisted chemical vapor deposition (MPCVD) of diamond with \emph{in situ} nitrogen doping has shown promise in the synthesis of these heteroepitaxially grown centers[1]. Currently the effect of different nitrogen doping times on the growth of NV centers is not well understood.
This poster will present the results of an investigation of varying N2 doping times during diamond synthesis and how this affects the growth of both NVo and NV centers within polycrystalline MPCVD diamond films. Investigation with Raman spectroscopy, photo luminescence spectroscopy and X-ray diffraction were carried out. By increasing or decreasing the N2 doping time and studying the variation of the intensity of the 637 nm NV photoluminescence (PL) spectral line, we derive a relationship between doping time and density of NV centers.

[1] Ejalonibu, H. A., Sarty, G. E., Bradley, M. P. (2019, April 25). "Optimal parameter(s) for the synthesis of nitrogen-vacancy (NV) centres in polycrystalline diamonds at low pressure" - \emph{Journal of Materials Science: Materials in Electronics.} SpringerLink. https://link.springer.com/article/10.1007/s10854-019-01376-z

Keyword-1 nitrogen vacancy centers
Keyword-2 microwave plasma
Keyword-3 chemical vapor depositions

Author

William Davis (University of Saskatchewan)

Co-author

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