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HEP Thin Films Biweekly

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Zoom link: https://ucsc.zoom.us/j/93578483281?pwd=KzNUK3FQOE5FNzZmbXB4V1U2ajUzdz09

    • 1
      Single-pad InP characterization paper update

      Overleaf: https://www.overleaf.com/project/6916482c7c9af29611dcb701

      Speakers: Earl Russell Tang Almazan (University of California,Santa Cruz (US)), Dr Jennifer Ott (University of California,Santa Cruz (US))
    • 2
      Argonne update
      Speakers: Jessica Metcalfe (Argonne National Laboratory (US)), Sungjoon Kim
    • 3
      UHawaii update
      Speaker: Dr Jennifer Ott (University of California,Santa Cruz (US))

      Meeting minutes

       

      Earl’s presentation: data analysis / fitting

      • -        Persistent current phenomenon
      • -        Arrhenius equation on linear fit of ln(current) over 1000/K: linear, now by excluding cluster of spread points, slope of two different devices matches closely, third also in general agreement but has fewer points
      • -        Shiva: suggested to report current densities instead of raw values (for easier comparison and general idea of detector dark current behaviour)
      • -        Sungjoon: one or several traps? – cf. modelling by Taylor et al, cf. plots of trap distributions later
      • -        Jenni: experimental data would show effective / average ‘activation energy’
      • -        Fit single or multiple exponential in persistent current
      • -        ‘stretched’ fit

       

      Richville’s slides:

      • -        Recap of simulated device geometry
      • -        Bias up to +- 500 V
      • -        Target: implement temperature parameter to be varied
      • -        Changed definition from AmbientTemp to variable, conversion from input Celsius to Kelvin
      • -        First: temperature difference not implemented

      o   Physics model is/was in material definition: only applied to given material -> instead added global physics section to set temperature

      • -        First plot shown includes 0 and -15 C – lower current for lower temperature (as expected); somewhat high current with trap model ON
      • -         Will continue running other temperatures (-15, 0, 15, 24.85, 30 C), then provide CSV data to Earl – through shared Drive
      • -        Eventually specify one or a few given bias points, then simulate as function of temperature on x-axis
      • -        Plot of energy bands / DOS over band gap, including trap level and tail states

      o   Take out tail states..? Were taken from aSi simulation?

      o   Assuming Gaussian for trap state – sigma/width can be defined in trap model

      o   Delta function for trap DOS distribution? Need to check in documentation, we are aware so far of Gaussian and Exponential

      • -        Trap level: Sungjoon to point to literature for trap level (and width..)?
      • -        Start Geant4 simulation of 15 keV x-rays on same device geometry

       

      ANL update cont. /Jessica

      • -        thin films for detector R&D consortium discouraged (not surprising based on earlier statements with program manager)
      • -      EFRC within BES base at ANL: not selected, but happy with the process – started reaching out to potential new collaborators, outside of HEP world
      • -        Back to applying for internal funding
      • -        No updates/change on CVD (need funds)
      • -        ANL has monthly meetings with Helmut on detector R&D – not technically part of funded ANL portfolio, but Helmut has asked for update at next meeting: later in May. Might try to get integrated into FWP, but a lot of uncertainty in budgets.
    • 4
      RIL update
      Speaker: Shiva Abbaszadeh
    • 5
      SCIPP update
      Speakers: Earl Russell Tang Almazan (University of California,Santa Cruz (US)), Taylor Shin, Vitaliy Fadeyev (University of California,Santa Cruz (US))
      InPDevice_3D_Simulation_Preliminary_Report.pdf
      XRay2_Apr28.pdf
    • 6
      AOB