Speaker
Description
Silicon carbide (SiC) Low Gain Avalanche Detectors (LGADs) are a promising technology for precision timing and tracking thanks to their potential for enhanced radiation hardness, fast signal response, and dramatically decreased dark current as a wide bandgap material. The BNL/LBNL/NCSU (Brookhaven National Laboratory, Lawrence Berkeley National Laboratory, North Carolina State University) collaboration has successfully fabricated SiC devices exhibiting measurable gain, and we are now working towards an improved understanding of their material properties and development of additional fabrication techniques.
This talk will cover a recent irradiation campaign conducted at the Brookhaven National Laboratory Tandem Van de Graaff facility. SiC samples were subjected to silicon-ion implantation and proton irradiation to investigate defect-induced carrier compensation and its impact on charge transport. We will describe the irradiation methodology, present preliminary results, and discuss their implications on SiC device design. Ongoing activities and future plans for continued SiC development will also be discussed.