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Description
This study presents the design and numerical simulation of high-efficiency p-i-n solar cells based on III-nitride (III-N). By incorporating complex physical models including Fermi-Dirac statistics and Auger and Shockley-Read-Hall (SRH) recombination mechanisms, the work identifies optimal InxGa1-xN/GaN heterojunction configurations to maximize energy conversion efficiency. Beyond technical characterization, the work adopts an interdisciplinary methodology integrating innovation management and cost engineering. The analysis focuses on systematically reducing the cost per peak watt (Wp) through economies of scale and global supply chain optimization. Levelized Cost of Electricity (LCOE) modeling demonstrates that the efficiency gains of InGaN alloys offset higher initial production costs compared to conventional silicon technologies. Ultimately, this study shows that a strong synergy between material innovation and techno-economic planning is the essential driver for the massive and sustainable deployment of third-generation photovoltaics technologies worldwide.