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The ab initio study was performed using the Generalized Gradient Approximation (GGA) implemented in the CASTEP code to investigate the impact of vanadium doping on the electronic, optical, and magnetic properties of HgTe. The calculated lattice parameters under ambient conditions are in good agreement with the available experimental data. Pristine HgTe exhibits a semimetallic character, where the highest valence-band states slightly overlap with the lowest conduction-band states. Vanadium (V) doping induces ferromagnetism in the system, leading to a high spin polarization of approximately 90% at the Fermi level, making HgTe a promising candidate for spintronic applications. The Curie temperature (TC) was estimated using mean-field theory for doping concentrations of 12% and 24%. The results suggest that the double-exchange mechanism is the dominant interaction responsible for the observed ferromagnetism. Optical calculations also reveal enhanced absorption in the visible and infrared regions, highlighting the potential of V-doped HgTe for optoelectronic applications. These findings provide valuable insights for the development of transition-metal-doped HgTe materials for future spintronic and photonic technologies.