Speaker
Description
Novel spin-based logic architectures are being developed to provide high-performance nonvolatile data retention and processing. Two prominent directions include the development of spin-based in-memory computing and efficient, all-electric control of magnetic order. We have recently showed that spatial patterning of uniaxial anisotropy via selective oxidation can result in strong lateral coupling based on the Dzyaloshinskii–Moriya interaction [1]. The coupling can be incorporated into electrically-controlled devices comprising reconfigurable NAND and NOR logic gates [2]. Despite the limited number of material systems where such in-memory computing can be realized, the capability of patterning magnetic anisotropy opened unprecedented avenues. This discovery highlighted the need to develop new methods for spatial patterning, which could lead to new, disruptive technologies in magnetism and beyond.
To enhance the pool of structural and magnetic properties that can be patterned, we have developed direct-write laser annealing, which is based on local annealing [3]. Here, the underlying magnetic properties are linked to heat-activated processes such as crystallization, interdiffusion or oxidation. We demonstrate the capability of this technique by realization of a spin wave band pass filter and new architectures for passively resetting the position of a magnetic domain wall [3,4]. We also demonstrate that conventional and unconventional spin-orbit torques can be patterned based on the underlying designed structural gradients in tungsten thin films [5] as well as patterning magnetic properties in thin TmIG films.
The laser annealing-based method opens new opportunities to pattern material and magnetic landscapes with high-precision capability, leading to unprecedented applications in spintronics and magnonics, and thin-film based magnetism in general.
References
1. Z. Luo et al., Science, 363, 1435 (2019).
2. Z. Luo et al., Nature 579, 214-218 (2020).
3. L. Riddiford, J. A. Brock et al., Nat. Commun. 16, 10979 (2025).
4. J. Brock et al., Nano Lett., 26, 16, 5426–5433 (2026).
5. L. Riddiford, et al., arXiv:2601.01429 (2026).