Speaker
Description
Complex oxide materials stand at the forefront of solid-state quantum technologies, offering a rich playground where quantum properties can be finely tuned via external stimuli. The interplay between competing ground states in these systems not only unveils fascinating fundamental physics but also paves the way for multifunctional applications. Among these, oxide-based tunnel junctions have emerged as one of the leading candidates for the next generation of memristors: the building blocks of energy-efficient neuromorphic computing architectures.
In this talk, I will showcase our recent breakthroughs in oxide memristive devices, shifting the focus toward novel freestanding architectures and transport characterization, including light illumination. We will explore how a deterministic manipulation of quantum states at the nanoscale can be achieved across diverse functionalities—such as ferroelectricity, ferromagnetism, and superconductivity. By harnessing these strongly correlated phases, we demonstrate control over the device’s response, bridging the gap between fundamental quantum phenomena and the future of solid-state nanodevices.