Sep 20 – 25, 2026
University of Graz
Europe/Vienna timezone

Quantum interference in high harmonic generation from monolayer WS2

Sep 21, 2026, 10:45 AM
15m
HS 15.12 (University of Graz)

HS 15.12

University of Graz

15 - RESOWI C, 1st floor
3) Contributed talk M03 - Correlated Materials Out of Equilibrium Mini-Colloquium

Speaker

Anna Galler (TU Graz, Austria)

Description

Two-dimensional hexagonal materials such as transition-metal dichalcogenides exhibit valley degrees of freedom, offering fascinating potential for valley-based optoelectronics. In nonlinear optics, the K and K’ valleys provide excitation resonances that can be used for ultrafast control of excitons, Bloch oscillations, and Floquet physics. Under intense laser fields, however, the role of coherent carrier dynamics away from the K/K’ valleys is largely unexplored. In this study, we observe quantum interferences in high harmonic generation from monolayer WS2 as laser fields drive electrons from the valleys across the full Brillouin zone. In the perturbative regime, interband resonances at the valleys enhance high harmonic generation through multi-photon excitations. In the strong-field regime, the high harmonic spectrum is sensitively controlled by light-driven quantum interferences between the interband valley resonances and intraband currents originating from electrons occupying various points in the Brillouin zone, also away from K/K’ valleys. This joint theoretical-experimental work proposes new routes for harnessing laser-driven quantum interference in two-dimensional hexagonal systems and all-optical techniques to occupy and read-out electronic structures in the full Brillouin zone via strong-field nonlinear optics.

Author

Anna Galler (TU Graz, Austria)

Co-authors

Minjeong Kim (Pohang University of Science and Technology, Republic of Korea) Taeho Kim (Pohang University of Science and Technology, Republic of Korea) Angel Rubio (Max Planck Institute for the Structure and Dynamics of Matter, Hamburg, Germany) Ofer Neufeld (Technion Israel Institute of Technology) Jonghwan Kim (Pohang University of Science and Technology, Republic of Korea)

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