Speaker
Description
Silicon Photomultipliers (SiPMs) exhibit several desirable characteristics, including single-photon sensitivity, high intrinsic gain, and compact design. This has led to their increasingly widespread adoption in particle and astroparticle physics experiments, as well as a variety of other applications. More recently, SiPMs based on the NUV-MT technology have demonstrated improved photodetection efficiency along with reduced dark count rate and crosstalk compared to earlier designs. The performance of commercially available SiPMs based on the NUV-MT technology is characterised and presented in terms of breakdown voltage, gain, dark count rate, after pulsing probability, and optical crosstalk across a range of temperatures and operating voltages. The performance of different noise characterisation methodologies will also be discussed. Furthermore, the radiation hardness of these SiPMs is investigated following irradiations in a monoenergetic neutron beam and subsequent thermal annealing, with results presented on the effects on SiPM dark count rates.