Speaker
Description
Fully depleted CMOS monolithic active pixel sensors represent a promising technology for compact, low-power and high-resolution X-ray imaging systems, with potential applications in space instrumentation and medical imaging. In this work, we present the characterisation of ARCADIA CMOS pixel sensors developed in a 110 nm CMOS imaging technology, with emphasis on their electrical, readout and X-ray detection performance.
The investigated devices are based on a high-resistivity n-type active substrate and are designed to allow depletion from the backside through a dedicated backside implant. Measurements were performed on ARCADIA MD3 sensor assemblies using laboratory X-ray sources and a dedicated DAQ system based on front-end electronics and FPGA readout. The study includes sensor biasing, leakage current measurements, threshold optimisation, hit-map studies, cluster analysis and X-ray response measurements using characteristic X-ray lines.
The results show stable sensor operation under reverse bias, low-power readout performance and clear X-ray detection capability. Two-dimensional hit maps and cluster observables are used to evaluate the spatial response and charge-sharing behaviour of the sensor. The measurements provide useful input for the optimisation of thick fully depleted CMOS sensors and their possible use in advanced X-ray imaging techniques, including applications where high spatial resolution, low material budget and scalable monolithic integration are required.
Preferred contribution type: Poster
Relevant track: Advances in Pixel Detectors & Integration Technologies