Description
Sequential Ionic Layer Adsorption and Reaction(SILAR) is utilized to produce a high quality- controlled cobalt-
nickel oxide (CoNiO) thin films to be studied as a p-type semicon-
ductor. The films were deposited using adsorption-reaction cycles,making the growth reliable and controllable. The structural
integrity was analyzed using X-ray diffraction (XRD), which
confirmed a successful composite showing that the CoNiO thin
films have a polycrystalline nature with distinct diffraction peaks.
The optical characteristics in the 351–1000 nm wavelength range
were studied using UV–Vis spectroscopy; the optical band gap is
estimated to be under 2.5 eV based on the absorption edge, which
is consistent with CoNiO’s p-type conductivity. The combined
structural and optical results show that SILAR is a low-cost
method for creating high-quality