Speaker
Description
Understanding the interplay between electronic topology and electrostatics is essential for the development of quantum devices based on topological materials. Here, we investigate how topological properties, in particular the Chern number, influence the electrostatic profile of Chern-insulator junctions in the presence of a magnetic field.
Combining Landau-level and semiclassical approaches, we derive analytical expressions revealing that the built-in potential of a Chern-insulator junction is governed by the change in the Chern number across the junction. Large-scale tight-binding simulations of the Haldane model validate this prediction quantitatively. Thus, electronic topology and magnetic fields can be used as knobs to tailor electrostatic landscapes in microelectronic devices.
| Keyword-1 | Topological materials |
|---|---|
| Keyword-2 | Device electrostatics |