Speaker
Description
As Moore’s law approaches its physical limits, innovations in materials and structures are essential to advance CMOS technologies. The hydrogen-terminated silicon (100) surface, H–Si(100)-2×1, provides a promising platform for atomic-scale electronics, where individual hydrogen atoms can be selectively removed using scanning tunneling microscopy (STM) to create silicon dangling bonds (DBs). These DBs can be patterned into atomic-scale conductive wires that form key elements of DB-based nanoelectronic circuitry. There are two potential directions for DB wires on the H-Si(100)-2⨉1 surface. While DB wires aligned along the 2⨉1 dimer rows (dimer wires) are well established in the past literatures, DB wires oriented perpendicular to the dimer rows (cross-row wires) have been less explored. Here, we investigate these cross-row wires by performing differential conduction (dI/dV) measurements under STM to probe their local density of states (LDOS). Our results show electrical coupling across dimer rows, indicating the feasibility of current transmission in the cross-row direction. Furthermore, cross-row wires show discrete electronic states, which reveals their quantum dot nature similar to dimer wires. This study enriches the toolbox for DB-based atomic circuitry design, enabling bidirectional current transmission combined with previous dimer wire studies.
| Keyword-1 | Silicon Dangling Bonds |
|---|---|
| Keyword-2 | Scanning Tunneling Microscopy |
| Keyword-3 | Atomic Circuitry |