21–26 Jun 2026
U. Ottawa - Learning Crossroads (CRX) Building
America/Toronto timezone
Welcome to the 2026 CAP Congress Program website! / Bienvenue au siteweb du programme du Congrès de l'ACP 2026!

Atomically Precise Silicon Abstraction by Inverted-Mode STM

25 Jun 2026, 14:30
15m
U. Ottawa - Learning Crossroads (CRX) Building

U. Ottawa - Learning Crossroads (CRX) Building

100 Louis-Pasteur Private, Ottawa, ON K1N 9N3
Oral (Non-Student) / Orale (non-étudiant(e)) Surface Science / Science des surfaces (DSS) (DSS) Surface Science R1-8 | Science des surfaces (DSS)

Speaker

Dr Rosemary Cranston (CBN Nano Technologies Inc.)

Description

Direct 3D manipulation of covalently bonded atoms remains a challenge for atomically precise fabrication. Here, we introduce inverted-mode scanning tunnelling microscopy (IM-STM) [1] as a new approach for controlled atomic-scale reactions and demonstrate its application to individual silicon atom abstraction under ultra-high vacuum and cryogenic conditions. A silicon probe chip (SPC) with an atomically clean Si(100)-2x1 crystalline terrace at the apex serves as the probe, while a silicon wafer bearing isolated, custom-synthesized, surface-bound molecular tools acts as the sample. These molecular tools function both as imaging agents and as tools for chemical manipulation in a mechanosynthesis-based process. As the sample is scanned with the SPC, each protruding molecule provides a mirror image of the probe apex, and can immediately participate in surface reactions, enabling rapid verification and repeatability. For subtractive silicon patterning we employ MAOC-C2I , a tripodal molecule featuring an ethynyl iodide (-C2I) functional group. After electrical bias pulse-induced cleavage of the iodine, the resulting C2 radical is aligned with a target Si(100)-2x1 dimer of the SPC. A controlled approach-retraction process transfers one silicon atom to the molecule, akin to “pick-and-place” fabrication. This leaves unique silicon vacancies at the target site, which we describe with IM-STM imaging and density functional theory (DFT) calculations. Imaging with new molecules elsewhere on the sample surface confirms changes to the SPC lattice, and allows iterative targeting for the next abstraction, thus enabling a new capability towards atomically precise fabrication, and general manipulation of covalently-bonded silicon atoms in 3D.

  1. Barrera, E. et al. Inverted-Mode Scanning Tunneling Microscopy for Atomically Precise Fabrication. arXiv (2025) doi:10.48550/arxiv.2512.24431.
Keyword-1 Scanning Tunneling Microscopy
Keyword-2 Silicon Abstraction
Keyword-3 Atomically Precise Fabrication

Author

Dr Rosemary Cranston (CBN Nano Technologies Inc.)

Co-authors

Zehra Ahmed (CBN Nano Technologies Inc.) Eduardo Barrera (CBN Nano Technologies Inc.) Brandon Blue (CBN Nano Technologies Inc.) Adam Bottomley (CBN Nano Technologies Inc.) Christian Imperiale (CBN Nano Technologies Inc.) Alex Inayeh (CBN Nano Technologies Inc.) Cameron Mackie (CBN Nano Technologies Inc.) Mathieu Morin (CBN Nano Technologies Inc.) Marco Taucer (CBN Nano Technologies Inc.) Bheeshmon Thanabalasingam (CBN Nano Technologies Inc.)

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