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Abstract: The performance of silicon semiconductor based piezoresistive pressure sensors is depends on mechanical properties and electrical properties of the material, structural configuration, and doping concentration. Among different materials, polycrystalline silicon (poly-Si) has gained significant attention due to its compatibility with standard microfabrication processes, cost-effectiveness, and suitability for microelectromechanical system (MEMS) applications. This study is to investigate the performance of n-type polycrystalline silicon cantilever-based piezoresistive pressure sensors with varying doping concentrations range from 1x10^17 cm-3 to 1x10^22 cm-3. This work is mainly focuses on change in conductivity of electron, which is the major charge carrier in the n-type polysilicon semiconductor. This change in conductivity highly influenced on the performance of pressure sensor. To analyses the performance of n-type Polycrystalline Silicon Cantilever-based Piezoresistive Pressure Sensors, The COMSOL Multiphysics Simulator is use to simulated the designed sensor with different doping concentration for the applied pressure for 0 kPa to 100 kPa. The main performance parameters for this study are stress distribution on the surface, voltage gradient distribution, linearity, conductance and resistance of the sensor. From the simulations results, it is observed that the stress distribution and the voltage gradient on the surface of the sensor are equal for all the simulated model sensors. It is also observed that the output of the conductance and resistance are highly linear with the applied pressure. The conductance value of the sensor is increase with increase in doping concentration and it also increase with increase in applied pressure. While the resistance of the senor is decrease with increase in doping concentration and also decrease with increase in applied pressure. Further it is also observed that the span or change in resistance due to change in the applied pressure is decrease with increase in doping concentration.
In conclusion, the increasing in the doping concentration increase in the conductivity which lead to the decrease in sensitivity of the n-Type Polycrystalline Silicon Cantilever-based Piezoresistive Pressure Sensors. The sensor is highly linear with the applied pressure with negative slope.
